smd type ic www.kexin.com.cn 1 mosfet smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source silicon n-channel power f-mosfet 2SK3022 features avalanche energy capacity guaranteed high-speed switching low on-resistance no secondary breakdown low-voltage drive high electrostatic breakdown voltage absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v i d 5 a i dp * 10 a power dissipation t c =25 10 t a =25 1 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =1ma,v gs =0 60 v drain cut-off current i dss v ds =40v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate threshold voltage v th v ds =10v,i d =1ma 1 2.5 v forward transfer admittance y fs v ds =10v,i d =3a 2 4 s v gs =10v,i d =3a 90 135 m v gs =4v,i d =3a 130 200 m input capacitance c iss 220 pf output capacitance c oss 90 pf reverse transfer capacitance c rss 50 pf turn-on delay time t on 15 ns rise time t r 30 ns turn-off delay time t off 170 ns fall time tf 550 ns v ds =10v,v gs =0,f=1mhz i d =3a,v gs(on) =10v,r l =10 ,v dd =30v drain to source on-state resistance r ds(on)
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